Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching
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概要
- 論文の詳細を見る
In the course of studying UV-light excited etching, it was found that high-energy ArF excimer laser (193 nm, 6.4 eV) irradiation induced neutral electron traps in a SiO_2 film of a MOS capacitor. The trap generation origin was verified to be the excitation of impure OH and Si bonds by the irradiation of an ArF laser beam propagated in the SiO_2 film under a poly-Si electrode. It is proposed that Si ions, which released OH radicals during laser irradiation, act as electron traps. Furthermore, by manufacturing MOSFETs, RIE and ArF laser-irradiation damage was compared. Persistent damage induced during RIE on gate material was found to remain to the last.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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堀池 靖浩
広島大工
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Yamabe Kikuo
Vlsi Research Center Toshiba Corp.
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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Hayasaka Nobuo
Vlsi Research Center Toshiba Corp.
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HORIIKE Yasuhiro
VLSI Research Center, Toshiba Corporation
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SEKINE Makoto
VLSI Research Center, Toshiba Corp.
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OKANO Haruo
VLSI Research Center, Toshiba Corp.
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