Excimer Laser Photochemical Directional Etching of Phosphorous Doped Poly-Crystalline Silicon
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概要
- 論文の詳細を見る
Photochemical anisotropic etching of a gate material for MOS devices (n^1 poly-Si) has been investigated, based on the Reactive Ion Etching (RIE) mechanism. By adding deposition gas to the etching gas (chlorine), a thin organic film can be formed for preventing chlorine atoms from reacting on the sidewalls of fine patterns. Simultaneously, a normally irradiated Baser beam removes the film at the bottom surface and promotes an etching reaction. Thus, directional etched features can be achieved. Also, radiation damage can be evaluated in comparison with RIE. The photochemical etching technique is one of most suitable processes for future MOS devices without radiation damage.
- 社団法人応用物理学会の論文
- 1986-12-20
著者
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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堀池 靖浩
広島大工
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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HORIIKE Yasuhiro
VLSI Research Center, Toshiba Corporation
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SEKINE Makoto
VLSI Research Center, Toshiba Corp.
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OKANO Haruo
VLSI Research Center, Toshiba Corp.
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