Single Silicon Etching Profile Simulation
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概要
- 論文の詳細を見る
Single Si etching profile by Cl_2 and a mixture of Cl_2 and CHF_3 are discussed in terms of experimentation and simulation. A microprobe Auger analysis of a trench side wall has proven that the bombardment of obliquely impinging ions to a side wall leads to both concave and tailed features. In the case of a mixture of Cl_2 and CHF_3, the polymer film produced by CHF_3 protects the side wall from species impinging from an inclined direction. Furthermore, the difference in the polymer sputtering rate, resulting from subsequently impinging ions between the tailed part and the flat bottom regions improves the tailed part to the rectangular bottom. A profile simulation supports the idea that obliquely impinging species, polymer deposition and sputtering of a polymer are important factors in determining the single Si etching profile.
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Okano Haruo
Toshiba Research and Development Center
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HORIOKA Keiji
The Institute of Scientific and Industrial Research, Osaka University
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堀池 靖浩
広島大工
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Arikado T
Semiconductor Leading Edge Technologies Inc.
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Horioka Keiji
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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ARIKADO Tsunetoshi
Toshiba VLSI Research Center
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HORIOKA Keiji
Toshiba VLSI Research Center
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SEKINE Makoto
Toshiba VLSI Research Center
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Arikado Tsunetoshi
Toshiba Research And Development Center Toshiba Corporation
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Arikado Tunetoshi
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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