Reactive Ion Beam Etching of SiO_2 and Poly-Si Employing C_2F_6, SiF_4 and BF_3 Gases
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概要
- 論文の詳細を見る
A magnetron ion gun, improved by using a permanent magnet to produce a larger magnetic flux density at the annular gap, has been applied to reactive ion beam etching. A discharge mode, in which the ion accelerating voltage remains at a constant low value even when the input power is increased, was found. In the constant-voltage mode, the SiO_2 to poly-Si etch rate ratio for C_2F_6 gas increases with increasing discharge current, while the ratios for SiF_4 and BF_3 are almost unity. Also, the effect of adding O_2 or H_2 gas was investigated. The addition of H_2 to the outside of the ion gun gives a selective ratio of SiO_2 to poly-Si as high as 25.
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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Horiike Yasuhiro
National Inst. For Materials Sci. Ibaraki Jpn
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Horiike Yasuhiro
Biomaterials Center National Institute For Materials Science
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Okano Haruo
Toshiba Research and Development Center
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Okano Haruo
Toshiba Research And Development Center Toshiba Corporation
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Horiike Yasuhiro
Development Of Material Science School Of Engineering University Of Tokyo
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Horiike Yasuhiro
World Premier International (wpi) Research Center Initiative International Center For Materials Nano
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