High-Rate Reactive Ion Etching of SiO_2 Using a Magnetron Discharge
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-11-05
著者
-
HORIIKE Yasuhiro
Toshiba Research and Development Center
-
Okano Haruo
Toshiba Research and Development Center
-
Yamazaki Takashi
Toshiba Research and Development Center
-
HORIE Hiromichi
Toshiba Research and Development Center
関連論文
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
- Etching Characteristics of n^+ Poly-Si and Al Employing a Magnetron Plasma
- High-Rate Reactive Ion Etching of SiO_2 Using a Magnetron Discharge
- On Strain and Coercive Force of RCo_5
- Reactive Ion Beam Etching of SiO_2 and Poly-Si Employing C_2F_6, SiF_4 and BF_3 Gases
- Si Etch Rate and Etch Yield with Ar^+/Cl_2 System
- Single Silicon Etching Profile Simulation
- Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl_2 Atmosphere
- Si and SiO_2 Etching under Low Self-Bias Voltage
- Aluminum Reactive Ion Etching Employing CCl_4+Cl_2 Mixture
- Si and SiO_2 Etching Characteristics by Fluorocarbon Ion Beam