Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl_2 Atmosphere
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概要
- 論文の詳細を見る
Poly-Si etching under Hg-Xe lamp irradiation in a Cl_2 atmosphere was investigated. It was found that n^+ poly-Si is etched by chemical reaction with Cl radicals photodissociated in the gas phase, while undoped and p^+ poly-SI cannot be etched without irradiation by UV light. The primary effect of the photoirradiation is to produce electrons arising from electron-hole pair generation. The etch rates, etched features and etching products depend strongly on the electron concentration in the conduction band. The experimental results are explained by assuming that electron-attached Cl^- ions penetrate into the Si lattice.
- 社団法人応用物理学会の論文
- 1985-01-20
著者
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Okano Haruo
Toshiba Research and Development Center
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堀池 靖浩
広島大工
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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SEKINE Makoto
Toshiba VLSI Research Center
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