Etching Characteristics of n^+ Poly-Si and Al Employing a Magnetron Plasma

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-04-20

著者

• HORIIKE Yasuhiro

  Toshiba Research and Development Center

• Okano Haruo

  Toshiba Research and Development Center

• Yamazaki Takashi

  Toshiba Research and Development Center

• Tokura Tsunemasa

  Tokuda Seisakusho

関連論文

• Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
• Etching Characteristics of n^+ Poly-Si and Al Employing a Magnetron Plasma
• High-Rate Reactive Ion Etching of SiO_2 Using a Magnetron Discharge
• Reactive Ion Beam Etching of SiO_2 and Poly-Si Employing C_2F_6, SiF_4 and BF_3 Gases
• Si Etch Rate and Etch Yield with Ar^+/Cl_2 System
• Single Silicon Etching Profile Simulation
• Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl_2 Atmosphere
• Si and SiO_2 Etching under Low Self-Bias Voltage
• Aluminum Reactive Ion Etching Employing CCl_4+Cl_2 Mixture
• Si and SiO_2 Etching Characteristics by Fluorocarbon Ion Beam

スポンサーリンク