Si and SiO_2 Etching Characteristics by Fluorocarbon Ion Beam
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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Horiike Yasuhiro
National Inst. For Materials Sci. Ibaraki Jpn
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Horiike Yasuhiro
Biomaterials Center National Institute For Materials Science
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Shibagaki Masahiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Shibagaki Masahiro
Toshiba Research And Development Center Toshiba Corporation
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Horiike Yasuhiro
Development Of Material Science School Of Engineering University Of Tokyo
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Horiike Yasuhiro
World Premier International (wpi) Research Center Initiative International Center For Materials Nano
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KADONO Katsuo
Toshiba Research and Development Center, Toshiba Corporation
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Kadono Katsuo
Toshiba Research And Development Center Toshiba Corporation
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- PREFACE
- Application of Photoexcited Reaction to VLSI Process (Special Issue on Opto-Electronics and LSI)
- Si and SiO_2 Etching Characteristics by Fluorocarbon Ion Beam
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- In Vivo Batteryless Wireless Communication System for Bio-MEMS Sensors
- Fabrication and Characterization of Quartz Nanopillars for DNA Separation by Size