KrF Excimer Laser Projection Lithography: 0.35μm Minimum Space VLSI Pattern Fabrication by a Tri-Level Resist Process

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概要

• 論文の詳細を見る

• An excimer laser exposure system has been newly developed, which adopts a 0.37 NA achromatic projection lens and a 248 nm wavelength KrF excimer laser as a light source. Irregular PMMA development was observed for exposures on a silicon substrate. Theoretical simulation clarified that an initial 0.02μm thickness variation caused more than 0.16μm thick resist residues due to intense standing waves. The standing waves could be suppressed by the use of a tri-level resist process so that VLSI patterns of 0.35 μm minimum space could be obtained.

• 社団法人応用物理学会の論文
• 1988-02-20

著者

• Horiike Yasuhiro

  National Inst. For Materials Sci. Ibaraki Jpn

• Horiike Yasuhiro

  Biomaterials Center National Institute For Materials Science

• HIGASHIKAWA Iwao

  ULSI Research Laboratories, Toshiba Corporation

• Nakase Makoto

  Vlsi Research Center Toshiba Corporation

• Higashikawa I

  Ulsi Research Laboratories Toshiba Corporation

• SATO Takashi

  VLSI Research Center, Toshiba Corporation

• NONAKA Misako

  VLSI Research Center, Toshiba Corporation

• HIGASHIKAWA Iwao

  VLSI Research Center, Toshiba Corporation

• HORIIKE Yasuhiro

  VLSI Research Center, Toshiba Corporation

• Nonaka Misako

  Vlsi Research Center Toshiba Corporation

• Horiike Yasuhiro

  Development Of Material Science School Of Engineering University Of Tokyo

• Horiike Yasuhiro

  World Premier International (wpi) Research Center Initiative International Center For Materials Nano

• 佐藤 隆

  (株)東芝セミコンダクター社

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