Horiike Yasuhiro | World Premier International (wpi) Research Center Initiative International Center For Materials Nano

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概要

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著作論文

Floating Potential in Negative-Ion-Containing Plasma
A Study on Mechanism of Chemical Mechanical Polishing on Al and Cu Surfaces Employing In-situ Infrared Spectroscopy
In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
Selective Processing of Individual Carbon-Nanotubes Using Atomic Force Microscopy Installed in Transmission Electron Microscope
Sheath Width in Negative-Ion-Containing Plasma
Emissive Probe Study of CF_4/H_2 Etching Plasma
Integrated DNA Purification and Detection Device for Diagnosis of Infection Diseases
DNA Size Separation Employing Quartz Nano-Pillars with Different Allocations
RF Attenuation Characteristics for In Vivo Wireless Healthcare Chip
in-vivo Wireless Communication System for Bio MEMS Sensors
One-Chip Integration of the Rapid Diagnosis Infectious Disease Chip Based on New Phenomena of DNA Trap and Denature in Nano-Gaps
Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma
Reactive Ion Beam Etching of SiO_2 and Poly-Si Employing C_2F_6, SiF_4 and BF_3 Gases
Grafting Poly(ethylene glycol) to a Glass Surface via a Photocleavable Linker for Light-induced Cell Micropatterning and Cell Proliferation Control
KrF Excimer Laser Projection Lithography: 0.35μm Minimum Space VLSI Pattern Fabrication by a Tri-Level Resist Process
Gas Residence Time Effects on Plasma Parameters: Comparison between Ar and C4F8
Droplet device for immunoassay detection
Si and SiO_2 Etching Characteristics Using Reactive Ion Etching with CF_4-Cl_2 Gas Mixture
A Portable Biochemical Analysis System Integrated with Microcapillary Electrophoresis and Microplasma Emission Spectroscopy
PREFACE
Application of Photoexcited Reaction to VLSI Process (Special Issue on Opto-Electronics and LSI)
Si and SiO_2 Etching Characteristics by Fluorocarbon Ion Beam

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