Iida Shinya | Speedfam Co. Ltd.
スポンサーリンク
概要
関連著者
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Iida S
Toyama Univ. Toyama Jpn
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Iida Shinya
Speedfam Co. Ltd.
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Iida S
Nagaoka Univ. Technol. Nagaoka Jpn
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IIDA Satoshi
Department of Physics,Kwansei-Gakuin University
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Kawata Hiroshi
Photon Factory Institute Of Materials Structure Science
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Sugita Yutaka
Hitachi Research Laboratory Hitachi Lid.
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Iida Satoshi
Department Of Orthopaedic Surgery Matsudo City Hospital
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Sugita Y
Department Of Physics Toyama University
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Kawata H
Department Of Physics And Electronics Gra4uate School Of Engineering Osaka Prefecture University
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SUGITA Yoshimitsu
Department of Physics, Toyama University
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KAWATA Haruo
Fujitsu Laboratories Limited
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Iida Satoshi
Department Of Orthopaedic Surgery Chiba University
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Sugita Yoshimitsu
Department Of Physics Toyama University
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Tsuboi Nozomu
Faculty Of Engineering Niigata University
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Tsuboi Nozomu
Department Of Electrical Engineering Nagaoka University Of Technology:(present Address)department Of
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IIDA Seishi
Nagaoka University of Technology
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Sugita Yutaka
Research Institute Of Electrical Communication Tohoku University
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Iida Seishi
Nagaoka Univerity Of Technology Kamitomioka
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Tsuboi N
Faculty Of Engineering Niigata University
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Tsuboi Nozomu
Nagaoka University Of Technology
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Kawata Hiroshi
National Laboratory for High Energy Physics (KEK)
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Terasako Tomoaki
Faculty of Engineering, Ehime University
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Terasako T
Faculty Of Engineering Ehime University
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Kawata Hiroshi
National Laboratory For High Energy Physics
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Kawata Hiroshi
Photon Factory, National Laboratory for High Energy Physics
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Abe Tomoki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
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Aoki Yasushi
Japan Atomic Energy Research Institute
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Abe T
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
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Abe Takao
Shin-etsu Handotai
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Abe Takao
Shin-etsu Handotai Company
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Abe Takao
Seh R&d Center Shin-etsu Handotai Co. Ltd.
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AOKI Yoshirou
Department of Physics, Toyama University
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ABE Takao
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
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OKITSU Kouhei
Department of Physics, Toyanta University
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Aoki Y
Advanced Technology Research Center Kanagawa Institute Of Technology
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Abe T
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
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Okitsu K
Toyota Technological Inst. Nagoya Jpn
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Takeno H
Kobe Univ. Kobe Jpn
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Aoki Yoshirou
Department of Electrical and Electric Engineering, Kanagawa Institute of Technology
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Abe Takao
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., 2-13-1 Isobe, Annaka, Gunma 379-01, Japan
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Okitsu Kouhei
Department of Physics, Toyama University, 3190 Gofuku, Toyama 930, Japan
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Sugiyama Hiroshi
Department of Chemistry, Graduate School of Science Kyoto University
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TSUBOI Nozomu
Department of Material Science and Technology, Niigata University
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NAJAFOV Hikmat
Department of Chemistry, Nagaoka University of Technology
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NAJAFOV Hikmat
Nagaoka University of Technology
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KATO Ariyuki
Nagaoka University of Technology
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Aoki Y
Department Of Materials Development Japan Atomic Energy Research Institute
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IIDA Seishi
Department of Electrical Engineering, Technological University of Nagaoka
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Sugiyama H
Institute Of Materials Structure Science High Energy Accelerator Research Organization Kek
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Aoki Yuji
Superconductivity Research Laboratory Istec
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Toyota H
Nagaoka Univ. Technol. Nagaoka Jpn
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ISU Takehiro
Nagaoka University of Technology
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TERASAKO Tomoaki
Department of Electrical Engineering, Nagaoka University of Technology
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TERASAKO Tomoaki
Nagaoka University of Technology
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TAKENO Hiroshi
Department of Physics, Toyama University
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Iida Seishi
Department Of Electrical Engineering Nagaoka University Of Technology
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TOYOTA Hideyuki
Nagaoka University of Technology
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IWAI Kazutoshi
Nagaoka University of Technology
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BAYRAMOV Ayaz
Nagaoka University of Technology
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Uchiki H
Nagaoka Univ. Technol. Nagaoka Jpn
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Sugiyama Hiroshi
Department Of Chemistry Graduate School Of Science Kyoto University
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Terasako Tomoaki
Department Of Electric And Electronic Engineering Faculty Of Engineering Ehime University
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Sugiyama Hiroshi
Department Of Chemistry Faculty Of Science
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Yamaguchi M
Department Of Physics Yokohama National University
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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YANAGISAWA Michihiko
Speedfam Co., Ltd.
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
National Inst. For Materials Sci. Ibaraki Jpn
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Horiike Yasuhiro
Biomaterials Center National Institute For Materials Science
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MORITA Yukinori
National Institute for Advanced Interdisciplinary Research
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Morita Y
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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ANDO Yoshihide
Nagaoka University of Technology
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SAWADA Masayuki
Nagaoka University of Technology
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UCHIKI Hisao
Department of Electrical Engineering, Nagaoka University of Technology
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KAKUDA Noritoshi
Nagaoka University of Technology
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MOROHASHI Makoto
Nagaoka College of Technology
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ANDO Yohihide
Nagaoka University of Technology
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OKAMOTO Shoichi
Nagaoka College of Technology
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YAGI Masakazu
Department of Electrical Engineering, Nagaoka University of Technology
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UCHIKI Hisao
Nagaoka University of Technology
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ISHIKAWA Hideyuki
Nagaoka University of Technology
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TSUNEDA Masayuki
Department of Physics, Toyama University
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TAKENO Hiroshi
SEH Isobe R & D Center, Shin-Etsu Handotai Co., Ltd.
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YAGOU Yasuyoshi
Department of Physics, Toyama University
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Yagi M
Department Of Electrical Engineering Nagaoka University Of Technology:department Of Electronics Taku
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Yagi Masakazu
Department Of Electrical Engineering Kyoto University
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Yagou Yasuyoshi
Department Of Physics Toyama University : (present Address) Lsi Research And Development Laboratory
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Morita Y
Consortium Fuer Elektrochemishe Ind. Gmbh Muenchen Deu
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MORITA Yoshimitsu
PTM Project, Systems Division, USHIO Inc.
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YAMAGUCHI Masanori
PTM Project, Systems Division, USHIO Inc.
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IIDA Shinya
PTM Project, Systems Division, USHIO Inc.
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NITAMI Kenji
Process Engineering Section, LSI Process Technology Department, Integrated Circuit Division, Electro
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YANAGISAWA Michihiko
Department of Material Science, School of Engineering, University of Tokyo
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Sawada M
Nagaoka University Of Technology
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OGAWA Hiroki
Development of Material Science, School of Engineering, University of Tokyo
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HORIIKE Yasuhiro
Development of Material Science, School of Engineering, University of Tokyo
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Nitami Kenji
Process Engineering Section Lsi Process Technology Department Integrated Circuit Division Electronic
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Yanagisawa Michihiko
Department Of Material Science School Of Engineering University Of Tokyo
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Yanagisawa Michihiko
Speedfam Co. Ltd.
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Okamoto S
Univ. Tsukuba Ibaraki Jpn
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Ogawa Hiroki
Development Of Material Science School Of Engineering University Of Tokyo
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Yanagisawa Michihiko
Speedfam-ipec Co. Ltd.
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Iida Shinya
Speedfam-ipec Co. Ltd.
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Tsuneda Masayuki
Department Of Physics Toyama University
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Horiike Yasuhiro
Development Of Material Science School Of Engineering University Of Tokyo
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Horiike Yasuhiro
World Premier International (wpi) Research Center Initiative International Center For Materials Nano
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Yamaguchi Masanori
Ptm Project Systems Division Ushio Inc.
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HORIIKE Yasuhiro
Department of Material Science, School of Engineering, University of Tokyo
著作論文
- Improvement in Layer Quality of CuGaS_2 Grown by Vapor Phase Epitaxy with Metal Chlorides and H_2S Sources
- Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al_xGa_)S_2 Crystals
- Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
- Optical and Electrical Characterization of CuGaS_2 Grown by Vapor Phase Epitaxy
- Deep Region Emissions of CuGaS_2 Crystals
- Resonant Raman Scattering and Excitonic Polariton States in CuGaS_2
- Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
- Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
- Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
- Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal
- Synchrotron Radiation Section Topography with Extremely High-Order Reflection and Its Application to the Characterization of MCZ-Silicon Crystals
- Measurement and Analysis of the Static Debye-Waller Factor of Cz-Silicon with Small Oxygen Precipitates : Techniques, Instrumentations and Measurement
- Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellosung Fringe Method
- Submicron Particles Observed during Etching Process
- Numerically Controlled Dry Etching Technology for Flattening of Si Wafer which Employs SF_6/H_2 Downstream Plasma
- Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : II. Thermoluminescence
- Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : I. Energy Transfer from Ce to Eu Ions
- Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma