Iida S | Toyama Univ. Toyama Jpn

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著作論文

Improvement in Layer Quality of CuGaS_2 Grown by Vapor Phase Epitaxy with Metal Chlorides and H_2S Sources
Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al_xGa_)S_2 Crystals
Vapor-Phase Atomic Layer Epitaxy of CuGaS_2 at Atmospheric Pressure Using Metal Chlorides and H_2S
Optical and Electrical Characterization of CuGaS_2 Grown by Vapor Phase Epitaxy
Deep Region Emissions of CuGaS_2 Crystals
Resonant Raman Scattering and Excitonic Polariton States in CuGaS_2
Grown-in Microdefects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography
Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal
Synchrotron Radiation Section Topography with Extremely High-Order Reflection and Its Application to the Characterization of MCZ-Silicon Crystals
Measurement and Analysis of the Static Debye-Waller Factor of Cz-Silicon with Small Oxygen Precipitates : Techniques, Instrumentations and Measurement
Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellosung Fringe Method
Submicron Particles Observed during Etching Process
Numerically Controlled Dry Etching Technology for Flattening of Si Wafer which Employs SF_6/H_2 Downstream Plasma
Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : II. Thermoluminescence
Effect of Ce Co-Doping on CaGa_2S_4:Eu Phosphor : I. Energy Transfer from Ce to Eu Ions
Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma

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