Si and SiO_2 Etching under Low Self-Bias Voltage
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概要
- 論文の詳細を見る
Si and SiO_2 reactive ion etching and the associated radiation damage were investigated employing CF_4 in the low self-bias voltage region (less than 100 V). The etching was carried out using the substrate tuning method. In the low self-bias voltage region, both Si etching and SiO_2 etching proceed accompanied by the polymerization of CF_x (x=0-3) radicals generated from the dissociation of CF_4. The polymer deposited on the surface is decomposed by the subsequent ion bombardment to form F and CF_x radicals, which take part in the etching and the polymer formation reaction again. The radiation damage induced in the Si by energetic fluorocarbons depends strongly on the magnitude of the self bias. However, the damage induced by tens of volts can easily be removed.
- 社団法人応用物理学会の論文
- 1983-05-20
著者
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Materials Engineering The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical And Electronics Engineering Toyo University:department Of Materials Science
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Horiike Yasuhiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Horiike Yasuhiro
Toyo University
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Arikado Tsunetoshi
Toshiba Research And Development Center Toshiba Corporation
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Toyo University
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