Initiation of the Planarization of SiO2 Film Employing Anhydrous HF Gas

概要

論文の詳細を見る
New planarization technology of SiO2 films employing anhydrous HF (AHF) gas with no slurry was studied. In this planarization, the chemical reactions were dominant: consequently, soft planarization with no mechanical polishing was achieved. In this AHF planarization (AHFP) method, anisotropic etching of SiO2 film using AHF gas, the so-called "Dry Ox Process" was applied. The Dry Ox Process was observed in a SiO2 surface covered with negative-tone-photo-resist in 1977. We accidentally found similar effects employing conventional positive-tone-photoresist (OFPR-800), and other types of resists. We applied the newly found condition to AHFP. Only the contact of OFPR film to the SiO2 film generated the condensed layer on the surface of SiO2, consequently, initiation of AHFP was observed. However, the planarization process stopped within 1 min. This was considered that the active hydrogen on the surface of the OFPR was consumed. Eventually, the steps between the convexo-concave features were considerably reduced, improvement of film materials will be required for complete planarization.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15