Heliconwave Plasma Which Contains Negative Ion
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概要
- 論文の詳細を見る
In negative ion containing plasma, which is important in dry etching, dispersion of helicon wave is numerically investigated, and related plasma characters are discussed. In negative ion containing plasma, a cut-off newly appears at low frequency range and thus one of its important characters, that the phase velocity of helicon wave lowers with frequency, is lost. The fact states that the Landau damping cannot be a candidate for the production mechanism of heliconwave etching plasma in halogen gas. The skin depth of the wave in negative ion plasma is not shallow as in the electron plasma, and this fact may become important in case of realizing low damage etching.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-01-15
著者
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
-
Shindo Haruo
Department Of Applied Physics
-
Shindo Haruo
Department of Applied Physics, Tokai University, Kita-Kaname 1117, Hiratsuka, 259-12 Japan
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Horiike Yasuhiro
Department of Electrical Engineering, Toyo University, Kujirai 2100, Kawagoe, 350 Japan
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