Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis
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概要
- 論文の詳細を見る
We have fabricated a SAW filter with Al/c-AlN/c-Al_2O_3 structure. A single crystal AlN(0001) were grown on Al_2O_3(0001) substrate by metalorganic chemical vapor deposition. Optimum growth temperature was determined to be 1150℃. The AlN films used for the SAW filter was the thickness of 0.5μm with smooth surface. The Al electrode deposited on AlN is 0.1μm thick and has line & space of 1.3μm, which corresponds to the wave length of 5.2μm. Fabricated SAW filter has the center frequency of 1.07 GHz, which gives the SAW velocity of 5618 m/s. The SAW velocity was 1.8% less than that obtained by the simulation analysis.
- 東海大学の論文
著者
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SANDHU Adarsh
Department of Electrical and Electronic Engineering, Tokai University
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Shindo Haruo
Department Of Applied Physics Tokai University
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Sandhu Adarsh
Department Of Electrical And Electronic Engineering Tokai University
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Sandhu Adarsh
Department Of Electrical Engineering
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WAKASUGI Yasutaka
Course of Electrical Engineering
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HASEBE Yukinori
Course of Electrical Engineering
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MATSUSHITA Takahiro
Course of Electrical Engineering
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INUSHIMA Takashi
Department of Communications Engineering
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KOIZUMI Yoshiharu
Department of Applied Physics
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Shindo Haruo
Department Of Applied Physics
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