Silicon Trench Oxidation in Downstream of Microwave Oxygen Plasma
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概要
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For one application of nonequilibrium oxygen plasma, low-temperature silicon trench oxidation is examined under the conditions of radio frequency bias as well as DC bias applications. The silicon oxidation has a very strong dependence on the substrate bias and is drastically reduced under the condition of no bias. The oxidation depth shows a maximum in a far downstream position from the microwave window. The silicon trench oxidation mapping clearly demonstrates that the maximum depth occurs along the line of the substrate bias of +20 V just above the plasma potential. In particular, silicon trench bottom oxidation is limited to higher radio frequency bias under the above conditions. It is concluded, for the reasons above, that the oxidation is due to the negative oxygen ions in downstream.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-06-25
著者
-
Shindo Haruo
Department Of Applied Physics
-
Shindo Haruo
Department of Information Telecommunication and Electronics, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
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Takahashi Shuuji
Advanced Marking Research Laboratories, Research and Development Management Headquarters, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan
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