New Emissive Probe Measurements of Electron Temperature in Two Modes of Radio-Frequency Plasmas
スポンサーリンク
概要
- 論文の詳細を見る
A new method which has recently been reported to measure electron temperature by an emissive probe is applied to radio-frequency (RF) plasmas. In particular, the electron temperature measurements are made, focused on the condition in which the mode transition from the capacitive to the inductive is occurred at the frequency of 13.56 MHz. The method is based on measurement of the functional relationship between the floating potential and the heating voltage of emissive probe. The measured data of the floating potential change as a function of the heating voltage behave quite differently, depending on the plasma mode. It is found that in the inductive mode, the floating potential change is consistent with the theory based on Maxwellian plasma, enabling to determine the electron temperature, while in the capacitive mode, the behavior of floating potential change is fairly complicated, hence non-Maxwellian plasma. With a great advantage of the present method, the electron energy probability function (EEPF) is calculated with the energy resolution of 2.3 kTe/e, and the EEPF thus obtained reveals a bi-Maxwellian in the capacitive mode, while it becomes Maxwellian in the inductive mode after the transition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-02-25
著者
-
Kusaba Kouta
Department Of Applied Physics Tokai University
-
Shindo Haruo
Department Of Applied Physics
-
Kusaba Kouta
Department of Information Telecommunication and Electronics, Tokai University, 1117 Kita-kaname, Hiratsuka, Kanagawa 259-1292, Japan
関連論文
- Ashing Properties in a Surface-Wave Mode Plasma with a Quartz Window
- Surface Wave Plasma Production Employing High Permittivity Material for Microwave Window : Nuclear Science, Plasmas, and Electric Discharges
- Ashing Properties in a Surface-Wave Mode Plasma with a High-Permittivity Alumina Window : Semiconductors
- Oxygen Microwave Plasma Density Enhancement by Surface Waves with a High-Permittivity Material Window
- Production of Large-Diameter Microwave Plasma with a High-Permittivity Material Window
- Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
- Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor
- Deep dry etching of quartz plate over 100μm in depth for the fabrication of high performance analytical chip(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
- Mode Transition Enhancement by Permittivity of Window Materials in Low Frequency Plasmas
- Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
- Development and Plasma Characteristics Measurement of Planar-Type Magnetic Neutral Loop Discharge Etcher
- Highly Selective SiO_2/Si Etching and Related Kinetics in Time-Modulated Helicon Wave Plasma
- SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
- Kinetic Treatment of Self-Reversal in Reversed Field Pinch Plasma
- Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis
- Establishment of Saha-Boltzmann Equilibrium for ArI Lower Excited Atoms in a Wall-Confined Arc Plasma
- Radio-Frequency Downstream Plasma Production by Surface-Wave in a Very High-Permittivity Material Discharge Tube
- Etching Reactivity of Negative Ions Generated in Cl_2 Downstream Plasma
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Thin Film Detection Employing Frequency Shift in Sheath Current Oscillation
- Excitation of Sheath Oscillating Current by Superimposing Pulse Voltage
- Silicon Etching Employing Negative Ion in SF_6 Plasma
- Warming Potential Reduction of C_4F_8 Using Inductively Coupled Plasma
- Laser-Induced Fluorescence Study of Penning Collision of Hel 2^1S Atom with Xe in He+Xe Gas Discharge Plasma : Waves, Optics and Quantum Electronics
- A Study of Capacitively Coupled Plasma Generation in Single-Loop Antennas : Nuclear Science, Plasmas, and Electric Discharges
- A New Method of Line Plasma Production by Microwave in a Narrowed Rectangular Waveguide
- Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field
- Etching Reactivity of Negative Ions Generated in Cl2 Downstream Plasma
- In Situ Measurements of Etching Species in SF6 Microwave Downstream Plasma by Ion Attachment Mass Spectroscopy
- Surface Wave Plasma Production Employing High-Permittivity Discharge Tube for Material Processing
- Heliconwave Plasma Which Contains Negative Ion
- Long Line-Shaped Microwave Plasma Generation Employing a Narrow Rectangular Waveguide
- Warming Potential Reduction of C4F8 Using Inductively Coupled Plasma
- Optimum Frequency for Inductively Coupled Plasma Generation with a Single-Loop Antenna
- New Emissive Probe Measurements of Electron Temperature in Two Modes of Radio-Frequency Plasmas
- Silicon Trench Oxidation in Downstream of Microwave Oxygen Plasma