Properties of High Quality InP Epilayers Grown by Solid Source Molecular Beam Epitaxy using Polycrystalline GaP as a Phosphorous Source

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-04-15

著者

• SANDHU Adarsh

  Department of Electrical and Electronic Engineering, Tokai University

• Sandhu A

  Tokai Univ. Kanagawa Jpn

• Sandhu Adarsh

  Department Of Electrical And Electronic Engineering Tokai University

• MISSOUS Mohamed

  Department of Electrical Engineering and Electronics University of Manchester Institute of Science a

• Missous M

  Univ. Manchester Inst. Sci. And Technol. Manchester Gbr

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