InGaP/lnGaAs/GaAs High Electron Mobility Transistor Strutcture Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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SANDHU Adarsh
Department of Electrical and Electronic Engineering, Tokai University
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Aziz A
Palm Oil Res. Inst. Malaysia Selangor Mys
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Sandhu Adarsh
Departnnent Of Electrical Engineering Tokai University
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Sandhu Adarsh
Department Of Electrical And Electronic Engineering Tokai University
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MISSOUS Mohamed
Department of Electrical Engineering and Electronics University of Manchester Institute of Science a
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AZIZ Azlan
Department of Electrical Engineering and Electronics, University of Manchester Institute of Science
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Aziz Azlan
Department Of Computer Science And Engineering Graduate School Of Engineering Nagoya Institute Of Technology
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