<Abstract>Fabrication of Al_<1-x>In_xN films at the Resonance point of Nitrogen-ECR plasma

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概要

• 論文の詳細を見る

著者

• SHIRAISHI Tadashi

  Department of Communications, Tokai University

• Ono Yuuki

  Course Of Electrical Engineering Tokai University

• INUSHIMA Takashi

  Department of Communications Engineering

• Murano Kenji

  Course Of Electrical Engineering Tokai University

• YASAKA Shinichi

  Kanagawa Industrial Technology Research Institute

• OHOYA Seishirou

  Kanagawa Industrial Technology Research Institute

• Inushima Takashi

  Department Of Electronics Tokai University

• Shiraishi Tadashi

  Department Of Communication Engineering Tokai University

• Shiraishi Tadashi

  Department of Chemistry, Faculty of Science, Chiba University

関連論文

• In Situ Optical Diagnosis of Pulsed Laser Deposition and Oxidation of YBa_2Cu_3O_ Thin Films
• Preparation of Y-Cu-O/Ba-Co-O Multilayered Thin Films and Thermal Diffusion Behavior of the Interface
• Photo Chemical Vapor Deposition of Metal Oxide Films Relating to Bi-Sr-Ca-Cu-O Superconductor
• Chemical Interaction between High-T_c Superconducting Oxides and Alkaline Earth Fluorides
• Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis
• Fabrication of Al_In_xN films at the Resonance point of Nitrogen-ECR plasma
• A Comparative Study of Characteristics of Current-Type and Conventional-Type Cationic Bactericides
• Isomerization effect in a-Si:H
• Some Properties of Schottky Barrier Formed on Chalcogenide Amorphous Semiconductor
• Crystal Morphology and Electrical Properties of AlN Grown on 6H-SiC
• Co-existence of semiconducting and superconducting properties of InN(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
• Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer
• In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
• Superconducting Properties of InN with Low Carrier Density near the Mott Transition

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