Crystal Morphology and Electrical Properties of AlN Grown on 6H-SiC

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概要

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• AlN/6H-SiC MIS structures were investigated by the use of AlN grown by MOCVD. When AlN grew heteroepitaxially on the 6H-SiC(0001), the shape of scratch on 6H-SiC remained at AlN films. When we used 3.5°off axis 6H-SiC, AlN grew in step-flow condition and the traces of defect were wiped out. When AlN was grown on the Si-terminated (0001) surface of 6H-SiC with 3.5°off axis, best characteristics of the MIS structures were obtained.

• 東海大学の論文

著者

• HASEBE Yukinori

  Course of Electrical Engineering

• INUSHIMA Takashi

  Department of Communications Engineering

• Kondo Hideaki

  Course Of Electrical Engineering

関連論文

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• Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer
• In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
• Superconducting Properties of InN with Low Carrier Density near the Mott Transition

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