<Abstract>Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer

スポンサーリンク

概要

• 論文の詳細を見る
• 東海大学の論文

著者

• Davydov V.

  Ioffe Physico-technical Institute Russian Academy Of Sciences

• INUSHIMA Takashi

  Department of Communications Engineering

• YOKOYAMA Atsushi

  Course of Electrical Engineering, Tokai University

• Yokoyama Atsushi

  Course Of Electrical Engineering Tokai University

関連論文

• Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis
• Fabrication of Al_In_xN films at the Resonance point of Nitrogen-ECR plasma
• Crystal Morphology and Electrical Properties of AlN Grown on 6H-SiC
• Co-existence of semiconducting and superconducting properties of InN(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
• Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer
• In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
• Superconducting Properties of InN with Low Carrier Density near the Mott Transition

スポンサーリンク