Co-existence of semiconducting and superconducting properties of InN(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
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概要
- 論文の詳細を見る
In this report we present the summary of our recent contributions to the research of the co-existence of superconducting and semiconducting properties of InN grown on sapphire (0001) by the use of MBE and MOCVD methods. The investigated InN has the mobility of 700-1600 cm^2V^<-1>s^<-1> and the carrier concentrations of 2×10^<18>cm^<-3>〜7×10^<20>cm^<-3> . The samples show clear hexagonal phonon structures and sharp plasma reflections. The InN with the carrier concentration higher than 2×10^<19>cm^<-3> shows clear resistivity anomaly below 3.4 K and becomes type II superconductor at 0.6 K. The observed superconductivity of InN is anisotropic. The Shubnikov-de Haas measurements reveal that the electronic structure of InN is anisotropic and a constant carrier density exists on the a-b plane of hexagonal InN.
- 東海大学の論文
著者
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INUSHIMA Takashi
Department of Communications Engineering
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Inushima Takashi
Department Of Electronics
関連論文
- Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis
- Fabrication of Al_In_xN films at the Resonance point of Nitrogen-ECR plasma
- Crystal Morphology and Electrical Properties of AlN Grown on 6H-SiC
- Co-existence of semiconducting and superconducting properties of InN(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
- Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer
- In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
- Superconducting Properties of InN with Low Carrier Density near the Mott Transition