In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
スポンサーリンク
概要
- 論文の詳細を見る
In this article, we present an analysis of the pyrometer signals observed in AlN crystal growth on 6H-SiC taking into account the AlN emissivity. The AlN layers are grown by metal-organic chemical vapor deposition. The pyrometer is sensitive to the initial stage of the crystal growth of AlN as well as the crystal quality and the surface morphology of the substrate 6H-SiC. The analysis is applied to the classification of the electrical properties of the Al/AlN/6H-SiC MIS structure. We find two types of oscillations: these oscillations are out of phase each other due to the difference of the crystal quality of SiC. The different quality of SiC produces the different initial growth of AlN. Consequently, we succeed in obtaining high-insulating AlN.
- 東海大学の論文
著者
-
INUSHIMA Takashi
Department of Communications Engineering
-
SUZUKI Takamune
Course of Electrical Engineering
関連論文
- Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis
- Fabrication of Al_In_xN films at the Resonance point of Nitrogen-ECR plasma
- Crystal Morphology and Electrical Properties of AlN Grown on 6H-SiC
- Co-existence of semiconducting and superconducting properties of InN(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
- Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer
- In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-)
- Superconducting Properties of InN with Low Carrier Density near the Mott Transition