Highly Selective SiO_2 Etching Using CF_4/C_2H_4

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-30

著者

• 新宮原 正三

  Hiroshima University Graduate School Of Adsm

• Shingubara Shoso

  Department of Electrical Engineering, Hiroshima University

• SAKAUE Hiroyuki

  Department of Electrical Engineering, Hiroshima University

• SAKAUE Hiroyuki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Takahagi Takayuki

  Hiroshima University, Graduate School of ADSM

• TAKAHAGI Takayuki

  Department of Electrical Engineering, Hiroshima University

• KOJIMA Akisiro

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• OSADA Naomichi

  Department of Electrical Engineering, Faculty of Engineering, Hiroshima University

• Shingubara Shoso

  Department Of Applied Physics Tokyo Institute Of Technology:vlsi Research Center Toshiba Corporation

• Sakaue H

  Hiroshima University Graduate School Of Adsm

• Kojima Akisiro

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Osada Naomichi

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Sakaue Hiroyuki

  Department Of Electrical Engineering Hiroshima University

• Takahagi Takayuki

  Hiroshima University Graduate School Of Adsm

• Takahagi Takayuki

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

関連論文

• Si貫通ビアへの応用に向けた無電解めっき技術の研究(センサーデバイス,MEMS,一般)
• 24aPS-23 HiSORにおける光電子顕微鏡(PEEM)を用いた磁区構造研究(領域5ポスターセッション,領域5(光物性))
• ナノ粒子積層による低誘電率ポーラスダイヤモンド膜の形成
• 1P169 タンパク質標識に用いる金ナノ粒子の作製法の開発(分子モーター,第48回日本生物物理学会年会)
• Measurement of Fluorocarbon Radicals Generated from C_4F_8/H_2 Inductively Coupled Plasma : Study on SiO_2 Selective Etching Kinetics
• Al Etching Characteristics Ernploying Helicon Wave Plasma
• Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor
• Fabrication of Carbon Nanotube and Nanorod Arrays Using Nanoporous Templates
• Contact Resistance Reduction Using Vacuum Loadlock System and Plasma Dry Cleaning
• Formation of Ultra-High-Density Ferromagnetic Column Arrays Beyond 1 Tera/inch^2 Using Porous Alumina Template(Nano-Fabrication and Patterned Media)
• Effect of Additives on Hole Filling Characteristics of Electroless Copper Plating
• Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100 nm Cu Interconnections
• Thickness Dependences of Nucleation and Annihilation Fields of Magnetic Vortices in Submicron Supermalloy Dots
• Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu
• Computer-Aided Chemistry Estimation Method of Electronic-Polarization Dielectric Constants for the Molecular Design of Low-k Materials
• Formation of Al Dot Hexagonal Array on Si Using Anodic Oxidation and Selective Etching : Surfaces, Interfaoes, and Films
• Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere : Semiconductors
• Study of a Dielectric Constant Due to Electronic Polarization Using a Semiempirical Molecular Orbital Method I : Semiconductors
• Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Arrays Using DNA : Surfaces, Interfaces, and Films
• Well-size-controlled Golloidal Gold nanoparticles Dispersed in Organic Solvents
• Self-Organized Gold Nanodots Array on a Silicon Substrate and Its Mechanical Stability
• Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array
• Self-Organization of a Two-Dimensional Array of Gold Nanodots Encapsulated by Alkanethiol
• Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum
• LSI配線信頼性技術における課題と今後の方向
• Highly Selective SiO_2 Etching Using CF_4/C_2H_4
• Gap-filling of Cu Employing Sustained Self-Sputtering with Inductively Coupled Plasma Ionization
• A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler for Specific Surfaces
• In-Situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas
• 無電解ボトムアップめっきにおける添加剤の効果
• Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on a NH_4F-Treated Si(111) Surface
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Si(100)ウエハ表面の原子レベル制御とその評価
• 陽極酸化アルミナ・ナノホール中に形成したCo細線配列の磁気特性
• 無電解めっきでのボトムアップ堆積による微細接続孔埋め込み(低誘電率層間膜,配線材料及び一般)
• バリアメタル上の触媒なし無電解銅めっき技術
• 強磁性体微細ドットの磁化特性のサイズ及び膜厚依存性
• 18aWA-6 強磁性微細ドットにおける磁気特性の形状依存性
• Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
• Atomic Layer Controlled Digital Etching of Silicon
• Gap-Filling of Cu Employing Self-Sustained Sputtering with ICP Ionization
• 3P-198 トランスポゾンランダム挿入法を用いた1型リアノジン受容体の構造機能解析(生体膜/人工膜・興奮,チャネル,第46回日本生物物理学会年会)
• Vortices around a Sinkhole: Phase Diagram for One-Celled and Two-Celled Vortices
• Large magnetoresistance switching phenomena in nanoconduction path formed with dielectric breakdown of SiO2 multilayered with ferromagnetic film (Special issue: Microprocesses and nanotechnology)
• Experimental Study of Temperatures of Atmospheric-Pressure Nonequilibrium Ar/N_2 Plasma Jets and Poly(ethylene terephtalate)-Surface Processing
• Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement : Etching and Deposition Technology
• Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement
• Resistance Oscillations Induced by Direct Current Electromigration
• Surface Analysis of Carbon–Hydrogen Bonds in Diamondlike Carbon Films by X-ray Photoelectron Spectroscopy
• Diagnostics of Hydrogen Role in the Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared-Attenuated Total Reflection : Beam Induced Physics and Chemistry
• Diagnostics of Hydrogen Role in the Si Surface Reaction Processes Employing In-situ Fourier Transform Infrared-Attenuated Total Reflection
• Photoexcited Anisotropic Etching of Single-Crystalline Silicon
• High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas
• Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry
• アルミニウム配線中のボイドのエレクトロマイグレーション挙動の分子動力学シミュレーション
• Electromigration Characteristics of Cu-Al Precipitate in AlCu Interconnection
• Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field
• Formatiom of Self-Assembled Organic Ultrathin film by Chemisorption on Silicon Crystal Surface
• Formation of Vortices around a Sinkhole
• 金ナノ粒子触媒を用いた無電解バリア/シード層のCu-TSVへの応用(電子デバイスの高速・高密度実装とインテグレーション技術論文)
• Digital Chemical Vapor Deposition of SiO_2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation
• Chemical Structural Analysis of Diamondlike Carbon Films with Different Electrical Resistivities by X-ray Photoelectron Spectroscopy
• 3次元実装TSVへのコンフォーマル無電解バリアメタルの形成(配線・実装技術と関連材料技術)
• Fabrication of a Si Nanometer Column PN Junction and Implanted Defect Evaluation by Transmission Electron Microscopy
• A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler for Specific Surfaces

もっと見る 閉じる

スポンサーリンク