Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry
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概要
- 論文の詳細を見る
We successfully revealed the adsorption behavior of actual organic contaminations on a 81 wafer surface using a gas chromatograph/mass spectrometer system with a quartz heat-desorption chamber and a two-step concentration trap. Antioxidants contained in the wafer case material and a monomer and an oligomer from the plastic vessel material used in the production process were confirmed to contaminate the surface of the Si wafer. Organic materials in the atmosphere, such as organic solvents and plasticizers, were also observed to adsorb on the surface during an exposure to a laboratory atmosphere for a few hours. The results suggest that completely surface-cleaned Si wafers should be stored in a stocker in which the amount of organic species in the atmosphere is well controlled.
- 社団法人応用物理学会の論文
- 1996-07-01
著者
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新宮原 正三
Hiroshima University Graduate School Of Adsm
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Shingubara Shoso
Department of Electrical Engineering, Hiroshima University
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SAKAUE Hiroyuki
Department of Electrical Engineering, Hiroshima University
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SAKAUE Hiroyuki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Takahagi Takayuki
Hiroshima University, Graduate School of ADSM
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TAKAHAGI Takayuki
Department of Electrical Engineering, Hiroshima University
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Shingubara Shoso
Department Of Applied Physics Tokyo Institute Of Technology:vlsi Research Center Toshiba Corporation
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Sakaue H
Hiroshima University Graduate School Of Adsm
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Sakaue Hiroyuki
Department Of Electrical Engineering Hiroshima University
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Yashima Hiroshi
Toray Research Center Inc.
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HOSHINO Kunihiro
GL Sciences Inc.
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Takahagi Takayuki
Hiroshima University Graduate School Of Adsm
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Takahagi Takayuki
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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