Magnetoresistance Anisotropies in n-Type (001) Si on Sapphire

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概要

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• Weak field magentoresistance anisotropies near room temperature were observed on n-type (001) Si on sapphire. They are M^<<001>>_<<100>><M^<<010>>_<<100>>, M^<<100>>_<<100>>∼0 and M^<<110>>_<<110>>>M^<<001>>_<<110>>>M^<<110>>_<<110>>, where the superscript and subscript denote the magnetic field and the electric current directions, respectively. These anisotropies are well explained when it is assumed that the <001> energy ellipsoids make little contribution to conduction, the energy being raised relative to the <100> and <010> ellipsoids due to the large lateral strain induced by the thermal expansion coefficient difference.

• 社団法人日本物理学会の論文
• 1975-08-15

著者

• Ohmura Yamichi

  Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.

• Ohmura Yamichi

  Department of Physics,Tokyo institute of Technology

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