Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO_2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

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概要

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• Single-crystal silicon films (200 nm thick) have been grown laterally by thermal annealing from amorphous silicon evaporated on a single-crystal (100) silicon substrate and implanted with 〜10^<16>/cm^2 Si, onto an adjacent SiO_2 film by solid-phase epitaxy. The key requirements for this kind of lateral epitaxy appear to be a high-dose Si ion implanatation and low temperature (575℃) annealing for a long period in order to suppress the nucleation of randomly-oriented crystals on the SiO_2 film.

• 社団法人応用物理学会の論文
• 1982-03-05

著者

• KASHIWAGI Masahiro

  Toshiba Research and Development Center

• Ohmura Yamichi

  Toshiba Research And Development Center Toshiba Corporation

• Ohmura Yamichi

  Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.

• MATSUSHITA Yoshiaki

  Toshiba Research and Development Center, Toshiba Corporation

• Matsushita Yoshiaki

  Toshiba Research And Development Center Toshiba Corporation

• Kashiwagi Masahiro

  Toshiba Research And Development Center Toshiba Corporation

関連論文

• Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
• Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
• Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
• Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire
• Magnetoresistance Anisotropies in n-Type (001) Si on Sapphire
• Shallow Donor State Produced by Proton Bombardment of Silicon
• Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO_2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

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