Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I

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Effects of Oxygen Partial Pressure and Substrate Temperature on Crystalline Orientation in Y-Ba-Cu-O Films Prepared by Sputtering
Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
Effects of Implantation Dose and Laser Beam Wavelength on Sheet Resistivity Reduction for As-Implanted Poly-Si Films by Q-Switched Nd: YAG Laser Irradiation
Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
Electrical Characteristics of Depletion-Type SOS MOS Devices
Mobility Hump and Inversion Layer Subbands in Si on Sapphire
Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO_2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate
A New Field Isolation Technology for High density MOS LSI : A-5: DEVICE TECHNOLOGY (2)

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