Electrical Characteristics of Depletion-Type SOS MOS Devices

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概要

• 論文の詳細を見る

• (001) Si films on (1^^-012) sapphire substrates have preferential dislocation arrays in the <110> Si direction. In more detailed observation, dislocation arrays in the [11^^-0] Si direction are preferential to those in the [11^^-0] Si direction. A new significant anisotropy in the electron mobility of D-type SOS MOS devices is observed, and it is found to be due to the anisotropic dislocation arrays. Furthermore, the surface state density at the Si-SiO_2 interface is measured as 2×10^<11>〜8×10^<11>/cm^2・eV. These high densities of states are due to crystalline defects, mostly dislocations. Mobility humps are observed in the curves of μ_H vs. V_G for D-type SOS MOS devices, which phenomena can be explained by a model based on a change in the quantized subband structure with strain-induced anisotropic valley configuration. The appearance of the mobility humps closely resembles those in E-type SOS MOS devices.

• 社団法人応用物理学会の論文
• 1980-09-05

著者

• ONGA Shinji

  Toshiba Research and Development Center

• Kawaji Shinji

  Gakushuin University

• Onga Shinji

  Enginerring Design Center Case Western Reserve University

• Hatanaka Katunori

  Department Of Physics Gakushuin University

• Ko Wen

  Western Reserve University

• HATANAKA Katsunori

  Gakushuin University

関連論文

• Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
• Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Effect of Residual Stress on Hole Mobility of SOS MOS Devices
• Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
• Electrical Characteristics of Depletion-Type SOS MOS Devices
• Mobility Hump and Inversion Layer Subbands in Si on Sapphire

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