A New Field Isolation Technology for High density MOS LSI : A-5: DEVICE TECHNOLOGY (2)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-01
著者
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Kohyama Susumu
Toshiba Research And Development Center
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Iizuka Hisakazu
Toshiba Research And Development Center
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Shibata Tadashi
Toshiba Research And Development Center
関連論文
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
- A New Field Isolation Technology for High density MOS LSI : A-5: DEVICE TECHNOLOGY (2)