Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Shibata Kenji
Toshiba Research And Development Center
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ONGA Shinji
Toshiba Research and Development Center
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KOHYAMA Susumu
Toshiba Semiconductor Device Engineering Laboratory
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KOHYAMA Susumu
Semiconductor Device Laboratory
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NAGAKUBO Yoshihide
Semiconductor Device Laboratory
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IIZUKA Hisakazu
Semiconductor Device Laboratory
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Kohyama Susumu
Semiconductor Device Engineering Laboratory
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Iizuka Hisakazu
Semiconductor Device Engineering Laboratory
関連論文
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
- Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
- Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Effects of Implantation Dose and Laser Beam Wavelength on Sheet Resistivity Reduction for As-Implanted Poly-Si Films by Q-Switched Nd: YAG Laser Irradiation
- Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
- Non-Thermal Carrier Generation in MOS Structures : A-2: MOS DEVICES/BASIC ASPECTS
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Electrical Characteristics of Depletion-Type SOS MOS Devices
- Mobility Hump and Inversion Layer Subbands in Si on Sapphire
- A Thermionic Electron Emission Model for Charge Retention in SAMOS Structure