A Thermionic Electron Emission Model for Charge Retention in SAMOS Structure

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概要

• 論文の詳細を見る

• Charge retention in SAMOS structures at elevated temperatures is effectively described by a thermionic electron emission model from a floating polysilicon gate into the surrounding oxide. Experimental results showed sufficiently good agreement with the theoretical model. The barrier height and collision frequency derived from the experiments are reasonable (1.24eV and 2.5×10^4/sec, respectively). Long term data retention in floating gate EPROM's can also be predicted by this model.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• Kohyama Susumu

  Semiconductor Device Engineering Laboratory

• Nozawa Hiroshi

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• Kohyama Susumu

  Semiconductor Device Engineering Laboratory Toshiba Corporation

関連論文

• Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Low Activation Energy by Polarization in a Floating Gate Structure
• Non-Thermal Carrier Generation in MOS Structures : A-2: MOS DEVICES/BASIC ASPECTS
• A Thermionic Electron Emission Model for Charge Retention in SAMOS Structure

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