ONGA Shinji | Toshiba Research and Development Center
スポンサーリンク
概要
関連著者
-
ONGA Shinji
Toshiba Research and Development Center
-
Kawaji Shinji
Gakushuin University
-
Onga Shinji
Enginerring Design Center Case Western Reserve University
-
Hatanaka Katunori
Department Of Physics Gakushuin University
-
Shibata Kenji
Toshiba Research And Development Center
-
KOHYAMA Susumu
Toshiba Semiconductor Device Engineering Laboratory
-
Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
-
HATANAKA Katsunori
Department of Physics, Gakushuin University
-
MIZUTANI Yoshihisa
Toshiba Research and Development Center
-
Nakamura Koichi
Department of Material Physics, Faculty of Engineering Science, Osaka University
-
Yasuda Yukio
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
-
KASHIWAGI Masahiro
Toshiba Research and Development Center
-
TANIGUCHI Kenji
Toshiba Research and Development Center
-
KOHYAMA Susumu
Semiconductor Device Laboratory
-
NAGAKUBO Yoshihide
Semiconductor Device Laboratory
-
IIZUKA Hisakazu
Semiconductor Device Laboratory
-
KAWAJI Shinji
Department of Physics,Gakushuin University
-
Kohyama Susumu
Semiconductor Device Engineering Laboratory
-
Kohyama Susumu
Toshiba Research And Development Center
-
Ko Wen
Western Reserve University
-
HATANAKA Katsunori
Gakushuin University
-
Iizuka Hisakazu
Semiconductor Device Engineering Laboratory
-
Mizutani Yoshihisa
Toshiba Semiconductor Device Engineering Laboratory
-
Nakamura Koichi
Department Of Clinical Pharmacology And Therapeutics Oita University Faculty Of Medicine
-
Nakamura Koichi
Department of Chemistry, Faculty of Science, Hokkaido University
著作論文
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
- Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Electrical Characteristics of Depletion-Type SOS MOS Devices
- Mobility Hump and Inversion Layer Subbands in Si on Sapphire