Non-Thermal Carrier Generation in MOS Structures : A-2: MOS DEVICES/BASIC ASPECTS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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KOHYAMA Susumu
Semiconductor Device Laboratory
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IIZUKA Hisakazu
Semiconductor Device Laboratory
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Kohyama Susumu
Semiconductor Device Engineering Laboratory
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Furuyama Tohru
Semiconductor Device Engineering Laboratory
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MIMURA Shouichi
Research and Development Center, Toshiba Corporation
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Iizuka Hisakazu
Semiconductor Device Engineering Laboratory
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Mimura Shouichi
Research And Development Center Toshiba Corporation
関連論文
- Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Non-Thermal Carrier Generation in MOS Structures : A-2: MOS DEVICES/BASIC ASPECTS
- A Thermionic Electron Emission Model for Charge Retention in SAMOS Structure