Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire

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概要

• 論文の詳細を見る

• Magnetoresistance (MR) anisotropy measurement previously performed atroom temperature for 1-2 /Zlll thick p-type (001) silicon on sapphire (SOS) hasbeen extended down to 77 K. In order to explain these anisotropies, the valenceband structure is numerically calculated by the k-p method along withdeformation-potential-constant formalism assuming the lateral compressivestrain (x4 x 10 -') in silicon. In the four (110) directions for the upper strain-split777,=.l.3/2 band, the derivative (dE/dA') becomes very small at hole energiesabove x10 men, resulting in a tetragonally-warped, constant-energy surface withfour long (110) protrusions, which may be responsible for room-temperature"four (110)-ellipsoid-like" MR anisotropies. Although low-temperature MRanisotropies cannot be explained in terms of the low-energy ellipsoid, the highhole mobility which exceeds the electron one (A. C. Ipri: Appl. Phys. Lett. 22(1973) 76) may be due to rapid decrease of hole effective mass to the ellipsoidalone.

• 社団法人日本物理学会の論文
• 1979-07-15

著者

• Ohmura Yamichi

  Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.

• Ohmura Yamichi

  Toshiba R And D Center Toshiba Corporation

関連論文

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• Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire
• Magnetoresistance Anisotropies in n-Type (001) Si on Sapphire
• Shallow Donor State Produced by Proton Bombardment of Silicon
• Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO_2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

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