Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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Kawamura Ichiro
Central Research And Development Laboratory Showa Shell Sekiyu K.k.
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中村 圭二
中部大学
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中村 僖良
東北大学大学院工学研究科
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Shimizu H
Nihon Kesso Koogaku Co. Ltd. Gunma Jpn
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中村 僖良
東北大院・工
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Yokota Kazuaki
Department Of Molecular Chemistry Graduate Shool Of Engineering Hokkaido University
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YOKOTA Katsuhiro
Faculty of Engineering, Kansai University
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Shimizu H
National Inst. Materials And Chemical Res. Ibaraki Jpn
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Shimizu Hirofumi
High-technology Research Center And Faculty Of Engineering Kansai University
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Shimizu Hirofumi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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NAKAMURA Kazuhiro
High-Technology Research Center and Faculty of Engineering, Kansai University
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KODERA Jun
High-Technology Research Center and Faculty of Engineering, Kansai University
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YOKOTA Katsuhiro
High-Technology Research Center and Faculty of Engineering, Kansai University
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Shimizu H
High-technology Research Center And Faculty Of Engineering Kansai University
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Kodera Jun
High-technology Research Center And Faculty Of Engineering Kansai University
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Yokota K
Kobe Univ. Kobe Jpn
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Yokota Katsuhiro
High-technology Research Center And Faculty Of Engineering Kansai University
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Shimizu Hideaki
Department Of Reaction Chemistry Faculty Of Engineering The University Of Tokyo
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Nakamura Kazuhiro
High-technology Research Center And Faculty Of Engineering Kansai University
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