YOKOTA Katsuhiro | Faculty of Engineering, Kansai University

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著作論文

Growth of Hydrogenated Amorphous Silicon by an Inductive Coupling Glow Discharge Reactor
Local Adhesion of Diamond-Like Carbon Films Coated on Substrates in a Trench-shaped Cathode
Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules
Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
Degradation of High-Temperature Superconductor YBa_2Cu_3O_ in Water
Behavior of Excess Te Atoms in Undoped p-type CdTe Annealed under Te Vapor Pressures
Thermally-Stimulated Current in p-Type CdTe Annealed in Various Atmospheres
Anodic Oxidation of CdTe as a Thin-Layer Removal Technique
Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
Growth of CdTe on Te Substrates by Solid-State Reaction

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