Growth of CdTe on Te Substrates by Solid-State Reaction
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概要
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Cadmium-telluride was grown on Te substrates by heating (001) Te substrates with deposited Cd layers at low temperatures of 320-380℃ in Cd vapour. The thickness of the CdTe layer increased with rise in annealing temperature and increase of annealing time and Cd vapour pressure, but was independent of the thickness of the Cd layer deposited. The reaction of Cd with Te was exothermic. The Cd vacancy concentration in CdTe near the interface between CdTe and Te was higher than elsewhere, and the diffusion of Cd atoms into the Te substrate was enhanced by the presence of this vacancy concentration gradient. A growth mechanism is proposed based on the experimental results, and the values of the thickness calculated from the model agree well with the experimental values.
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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YOKOTA Katsuhiro
Faculty of Engineering, Kansai University
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Kariya T
Faculty Of Science Kochi University
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Kariya Tetsuya
Faculty Of Science Kochi University
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Kariya Tetsuya
Faculty Of Science Kohchi University
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Katayama Saichi
Faculty Of Engineering Kansai University
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Yokota Katsuhiro
Faculty Of Engineering Kansai University
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YOSHIMATSU Yoshihisa
Faculty of Engineering, Kansai University
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Yoshimatsu Yoshihisa
Faculty Of Engineering Kansai University
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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