Improving the Quality of GaAs Films by Electron Beam Irradiation during Molecular Beam Epitaxial Growth at Low Temperature
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概要
- 論文の詳細を見る
Thin GaAs films were grown on (001) GaAs substrates at temperatures ranging from 300℃ to 400℃ using Ga and As molecular beams under electron beam irradiation. These films were compared with GaAs films grown at the same temperatures by conventional molecular beam epitaxy (MBE). Electron beam irradiation improved the reflection high-energy electron diffraction (RHEED) patterns and increased the photoluminescence intensities of the GaAs films. These improvements were not a result of raised growth temperatures caused by electron beam irradiation.
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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Yamashita Kazumi
Faculty Of Engineering Kansai University
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Tamura Susumu
Faculty Of Engineering Kansai University
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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TAMURA Susumu
Faculty of Engineering, Kansai University
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YAMASHITA Kazumi
Faculty of Engineering, Kansai University
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KINOSHITA Koushi
Faculty of Engineering, Kansai University
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