Yokota Katsuhiro | Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan

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著作論文

Growth of Hydrogenated Amorphous Silicon by an Inductive Coupling Glow Discharge Reactor
Local Adhesion of Diamond-Like Carbon Films Coated on Substrates in a Trench-shaped Cathode
Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules
Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
Degradation of High-Temperature Superconductor YBa_2Cu_3O_ in Water
Thermally-Stimulated Current in p-Type CdTe Annealed in Various Atmospheres
Anodic Oxidation of CdTe as a Thin-Layer Removal Technique
Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
Growth of CdTe on Te Substrates by Solid-State Reaction
Behavior of Oxygen Adsorbed in Annealed Hydrogenated Amorphous Silicon
Dielectric Properties of BaTiO3 Films with SiO Layers Formed by Direct Deposition on Si Substrates using Low-Energy Oxygen-Ion Beams
XPS and AES Studies of Annealing Behavior of Carbon Adsorbed on Silicon Surfaces
Neutralization and Discharge of Electron Traps in Hydrogenated Diamond-Like Carbon Films Deposited on Ground Electrode by Plasma-Enhanced Chemical Vapor Deposition
Improving the Quality of GaAs Films by Electron Beam Irradiation during Molecular Beam Epitaxial Growth at Low Temperature
Deposition of Titanium Oxide Films with High Dielectric Constants on Silicon by an Ion Beam Assist Deposition Technique
Dependence of Resistivites of Cadmium Telluride on Residual Gas Pressure in Ampoules during Preparation
Dielectric Constants on Mixture Thin Films of Barium Carbide and Barium Nitrate Deposited on Silicon Wafers by Barium Carbonate Electron Beam Evaporation Using Nitrogen Molecular and Ion Beams

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