Dielectric Properties of BaTiO3 Films with SiO Layers Formed by Direct Deposition on Si Substrates using Low-Energy Oxygen-Ion Beams
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概要
- 論文の詳細を見る
BaTiO3 thin films ($<200$ nm) were directly deposited on Si wafers using an oxygen-ion-beam-assisted deposition technique. Si surfaces were oxidized during the deposition. The thicknesses of the formed SiO2 layers were proportional to the ion beam current and were almost independent of the ion beam energy and the N2 flux. The BaTiO3 films with thin SiO2 layers (20 nm) had larger remanent polarizations ($\sim 2$ μC/cm2) than the BaTiO3 films with thick SiO2 layers (25 nm). Many prepared films had a coercive field of about 50 kV/cm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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Takeda Akihiro
Faculty Of Engineering Kansai University
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Yokota Katsuhiro
Faculty Of Engineering Kansai University
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Kawasaki Yoshitomo
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Nakamura Kazuhiro
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Kawasaki Yoshitomo
Faculty Of Engineering Kansai University
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Nakamura Kazuhiro
Faculty Of Engineering Kansai University
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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Nakamura Kazuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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