XPS and AES Studies of Annealing Behavior of Carbon Adsorbed on Silicon Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
Annealing Behavior of C atoms adsorbed on Si surfaces were studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). AES results showed that C atoms on the Si surfaces decreased with increasing annealing temperature. XPS results showed that the adsorbed C atoms diffused into Si during annealing and formed silicon carbide by combining with Si atoms.
- 社団法人応用物理学会の論文
- 1986-10-20
著者
-
KIMURA Masatoshi
Faculty of Engineering, Kansai University
-
Yokota Katsuhiro
Faculty Of Engineering Kansai University
-
Kimura Masatoshi
Faculty Of Engineering Kansai University
-
KOJIMA Kenji
Japan Electron Optics Laboratory Co.
-
Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
関連論文
- Growth of Hydrogenated Amorphous Silicon by an Inductive Coupling Glow Discharge Reactor
- Local Adhesion of Diamond-Like Carbon Films Coated on Substrates in a Trench-shaped Cathode
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules
- Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
- Degradation of High-Temperature Superconductor YBa_2Cu_3O_ in Water
- Behavior of Excess Te Atoms in Undoped p-type CdTe Annealed under Te Vapor Pressures
- Thermally-Stimulated Current in p-Type CdTe Annealed in Various Atmospheres
- Anodic Oxidation of CdTe as a Thin-Layer Removal Technique
- Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
- Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
- Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
- Growth of CdTe on Te Substrates by Solid-State Reaction
- Behavior of Oxygen Adsorbed in Annealed Hydrogenated Amorphous Silicon
- Dielectric Properties of BaTiO3 Films with SiO Layers Formed by Direct Deposition on Si Substrates using Low-Energy Oxygen-Ion Beams
- XPS and AES Studies of Annealing Behavior of Carbon Adsorbed on Silicon Surfaces
- Neutralization and Discharge of Electron Traps in Hydrogenated Diamond-Like Carbon Films Deposited on Ground Electrode by Plasma-Enhanced Chemical Vapor Deposition
- Annealing of Hydrogenated Diamond-like Carbon Films Deposited on Ground Electrode of Plasma Enhanced Chemical Vapor Deposition System
- Improving the Quality of GaAs Films by Electron Beam Irradiation during Molecular Beam Epitaxial Growth at Low Temperature
- Deposition of Titanium Oxide Films with High Dielectric Constants on Silicon by an Ion Beam Assist Deposition Technique
- Dependence of Resistivites of Cadmium Telluride on Residual Gas Pressure in Ampoules during Preparation
- Dielectric Constants on Mixture Thin Films of Barium Carbide and Barium Nitrate Deposited on Silicon Wafers by Barium Carbonate Electron Beam Evaporation Using Nitrogen Molecular and Ion Beams