Dielectric Constants on Mixture Thin Films of Barium Carbide and Barium Nitrate Deposited on Silicon Wafers by Barium Carbonate Electron Beam Evaporation Using Nitrogen Molecular and Ion Beams
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概要
- 論文の詳細を見る
Thin barium carbide (BaC6) films were deposited on Si substrates by the electron beam evaporation of barium carbonate (BaCO3). Mixture films of BaC6 and barium nitrate (BaN2O4) were deposited on Si substrates using N2 molecules and ion beams during the evaporation of BaCO3 by electron beams. The fraction of BaN2O4 in the mixture films increased with increasing intensity of N2 molecular and nitrogen ion beams. The prepared films had a large number of C–O bonds, because the BaCO3 used was a source material. Highly O-doped BaC6 films had very low dielectric constants of $(1--2)\varepsilon_{0}$. However, the dielectric constants of the mixture films varied from 1.3 to $5.8\varepsilon_{0}$ with increasing proportion of BaN2O4.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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Teramoto Yuuki
Faculty of Engineering and HRC, Kansai University, Suita, Osaka 564-8680, Japan
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