Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-08-15

著者

• TAKANO Hiromichi

  Department of Physiology, Nagoya City University Medical School

• Yokota Kazuaki

  Department Of Molecular Chemistry Graduate Shool Of Engineering Hokkaido University

• YOKOTA Katsuhiro

  Faculty of Engineering, Kansai University

• KUMAGAI Masao

  Kanagawa Industrial Technology Research Institute

• Hirai K

  Kanagawa High-technology Foundation

• Kumagai M

  Kanagawa Industrial Technology Research Institute

• Shiomi Akira

  Department Of Electronics Faculty Of Engineering Kansai University

• Kamai Masayoshi

  Joining And Welding Research Institute Osaka University

• HIRAI Kiyohito

  Kanagawa High-Technology Foundation, Kanagawa Science Park

• TAKANO Hiromichi

  Kanagawa High-Technology Foundation, Kanagawa Science Park

• SAKAGUCHI Masanori

  Faculty of Engineering, Kansai University

• SHIOMI Akira

  Faculty of Engineering, Kansai University

• Yokota K

  Kobe Univ. Kobe Jpn

• Yokota Katsuhiro

  Faculty Of Engineering Kansai University

• Takano H

  Department Of Physiology Nagoya City University Medical School

• Takano Hiromichi

  Kanagawa High-technology Foundation

• Sakaguchi M

  Univ. Tsukuba

• Kumagai Masao

  Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213, Japan

• Yokota Katsuhiro

  Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan

• Takano Hiromichi

  Kanagawa High Technology Foundation Kanagawa Science Park

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