Shunting arc generation and deposition of amorphous carbon

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概要

• 論文の詳細を見る
• 2002-08-05

著者

• YUKIMURA Ken

  Doshisya University

• Saito Hidenori

  Kanagawa High-technology Foundation

• Ma Xinxin

  Harbin Institute Of Technology

• KUMAGAI Masao

  Kanagawa Industrial Technology Research Institute

• KUMAGAI Motoya

  Doshisha University

• KOHATA Mamoru

  Toshiba Tungaloy Co., LTD

• Saito Hidenori

  Kanagawa Academy Of Science And Technology

• Kohata Mamoru

  Toshiba Tungaloy Co. Ltd

• Kumagai M

  Kanagawa Industrial Technology Research Institute

• Kamai Masayoshi

  Joining And Welding Research Institute Osaka University

• Yukimura K

  Doshisha University

• Yukimura Ken

  Doshisha University

• Kumagai Masao

  Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213, Japan

関連論文

• Production of Nitrogen-containing Carbon Plasma using Shunting Arc Discharge for Carbon Nitride Films Preparation
• Dense Nano-structured and Preferentially-oriented Anatase Synthesized by Pulsed High Current Heating
• Compositional Effects of Ytterbia-Alumina Additives on Millimeter-Wave Sintering of Silicon Nitride(Physics, Processes, Instruments & Measurements)
• Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
• Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
• Morphology and Microstructure of Hard and Superhard Zr-Cu-N Nanocomposite Coatings
• Shunting arc generation and deposition of amorphous carbon
• Preparation of TiN film on an Φ80mm pipe by DC vacuum cathodic arc deposition and PBII
• Zr-based Hydrogen Absorbing Films Prepared by Ion Beam Assisted Deposition(Physics, Processes, Instruments & Measurements)
• Estimation of Homogeneity in Pulsed High Current Sintering by Crystallographic Character of Consolidated Anatase
• Tribological Property of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
• Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
• Silicorn Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition
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• Optimum Conditions for De-NOx by Dielectric Barrier Discharge
• Structure and tribological properties of Ti-Al-N films prepared by plasma-based ion implantation mixing
• Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
• Influence of Crystal Strain on Superconductivity of a-Axis Oriented YBa_2Cu_3O_x Films
• Helicon Wave Plasma Enhanced Sputtering and Application to Synthesis of Carbon Nitride Films(Physics, Process, Instrument & Measurements)
• Mass Density as Basis Parameter on Mechanical Properties under Diamond-Like Carbon Prepared in Wide Range of Conditions Using Variety of Methods
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• Cross Sections for ^O(He,He)^O Resonant Elastic Scattering and Application to Elemental Analysis of YBa_2Cu_4O_ and Nd_Ba_Cu_3O_ Films Grown on SrTiO_3
• Distribution Profiles of B Atoms in Diborane Implanted Silicon Prepared Using an Ion Implantor without Mass Filters
• Studies on Magnetron Sputtering Assisted by Inductively Coupled RF Plasma for Enhanced Metal Ionization
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• Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
• Use of Focused High-Power 60-GHz Radiation Beams for Advanced Sintering of Ceramics(Physics, Processes, Instruments & Measurements)
• NO_x Removal Using Ammonia Radicals Prepared by Intermittent Dielectric Barrier Discharge at Atmospheric Pressure
• Effect of Strain on Supercell Structure of Bismuth Cuprate Superconducting Film
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• Electrical characteristics of the hybrid plasma of 195kHz-burst RF plasma with arc-free HPPS glow plasma in reactive gases
• Effects of Mineralizers on PbTiO3 Films Prepared by Hydrothermal Method (セラミックスのケミカルプロセッシング)
• Methods for Spectral Responsivity Measurements of Dye-Sensitized Solar Cells
• Methods for Spectral Responsivity Measurements of Dye-Sensitized Solar Cells
• Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma
• Millimeter-Wave Annealing of SrBi2Ta2O9 Films Prepared by Sol–Gel Method
• Structure and Properties of Ti–Si–N Films Deposited by dc Magnetron Cosputtering on Positively Biased Substrates
• Tribological Property of CeO2 Films Prepared by Ion-Beam-Assisted Deposition
• Studies on Magnetron Sputtering Assisted by Inductively Coupled RF Plasma for Enhanced Metal Ionization

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