Distribution Profiles of B Atoms in Diborane Implanted Silicon Prepared Using an Ion Implantor without Mass Filters

概要

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Ion species generated from a mixed gas of B_2H_6 and H_2 were implanted into silicon at 25 keV using an ion implantor without mass filters. Approximately 80% of the ions implanted into the silicon were B_2H^+_5 and H^+_3 ions. The silicon had distinct atom distribution profiles, corresponding to B and H atoms decomposed from B_2H^+_5 ions and to H atoms dissociated from H^+_3 ions. The projected ranges of the distribution profiles of B and H atoms were the same as those for the B and H ions implanted into silicon at equivalent energies. However, B and H atoms decomposed from molecular ions resulted in broad exponential tails in the distribution profiles of the B and H atoms, and the exponential tails depended slightly on the amount of H_2 used for diluting B_2H_6.
社団法人応用物理学会の論文
1999-09-15