Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma

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概要

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• n-type layers in silicon with high carrier concentrations have been formed by high-dose (1×1015–1×1016 cm-2) As-ion implantation and subsequently 950°C-annealing. The n-type layers containing many As clusters were exposed to radio-frequency hydrogen plasma for 30 min. While the hydrogenated samples had the same As-atom concentration profile as the as-annealed samples, the carrier concentration profiles approached the As atom concentration profile with increasing substrate temperature. The activation energy obtained from the Arrhenius plot of the carrier concentration agreed well with that of the diffusivity of H atoms in silicon. Thus, the increase in the carrier concentration is a result of H atoms reacting with As clusters.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-15

著者

• Matsuda Kouji

  Nissin Electric Co. Ltd.

• HIRAI Kiyohito

  Kanagawa High-Technology Foundation, Kanagawa Science Park

• Yokota Katsuhiro

  High-technology Research Center And Faculty Of Engineering Kansai University

• Takano Hiromichi

  Kanagawa High-technology Foundation

• Kumagai Masao

  Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213, Japan

• Hosokawa Kouichi

  Faculty of Engineering, Kansai University, Suita, Osaka 564, Japan

• Terada Kouichiro

  Faculty of Engineering, Kansai University, Suita, Osaka 564, Japan

• Ando Yasunori

  Nissin Electric Co., Ltd., Ukyo-ku, Kyoto 615, Japan

• Hirai Kiyohito

  Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213, Japan

• Takano Hiromichi

  Kanagawa High Technology Foundation Kanagawa Science Park

• Takano Hiromichi

  Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213, Japan

• Matsuda Kouji

  Nissin Electric Co., Ltd., Ukyo-ku, Kyoto 615, Japan

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• Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
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• Effects of Mineralizers on PbTiO3 Films Prepared by Hydrothermal Method (セラミックスのケミカルプロセッシング)
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