Lowering of Silicon Surface Cleaning Temperature by Irradiating Low Energy Electron Beams

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概要

• 論文の詳細を見る

• Thermal cleaning of Si surfaces for homo- and heteroepitaxial growth on Si substrates was performed at temperatures below 700℃ by irradiating low energy and low intensity electron beams. In order to evaluate the cleaned Si surfaces, thin single crystalline GaAs films were grown at 450℃ using an organometal gas decomposition technique immediately after cleaning. No surface contamination, such as oxide and carbide, remained in the interface between the GaAs films and the Si substrates.

• 社団法人応用物理学会の論文
• 1999-07-15

著者

• NAKAMURA Kazuhiro

  High-Technology Research Center and Faculty of Engineering, Kansai University

• Imai Masashi

  High-technology Research Center And Faculty Of Engineering Kansai University

• Yokota Katsuhiro

  High-technology Research Center And Faculty Of Engineering Kansai University

• Nakamura Kazuhiro

  High-technology Research Center And Faculty Of Engineering Kansai University

関連論文

• Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
• X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
• Lowering of Silicon Surface Cleaning Temperature by Irradiating Low Energy Electron Beams
• Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma

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